Fairchild Semiconductor N/A KSD882YSTU データシート

© 2007 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

KSD882 Rev. B

1 

November 2007

• Audio Frequency Power Amplifier

• Low Speed Switcing
• Complement to KSB772.

 

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

** PW

≤10ms, Duty Cycle≤50%

T

a

=25

°C unless otherwise noted

*  Pulse Test: PW

≤350µs, Duty Cycle≤2% Pulsed

BV

CBO

Collector-Base Voltage

  40

V

BV

CEO

Collector-Emitter Voltage

  30

V

BV

EBO

Emitter-Base Voltage

   5

V

I

C

Collector Current(DC)

   3

A

I

C

Collector Current(Pulse)**

  7

A

I

B

Base Current

0.6

A

P

D

Total Device Dissipation(T

C

=25

°C)

Total Device Dissipation(T

a

=25

°C)

10

1

W
W

T

J

, T

STG

Junction and Storage Temperature

- 55 ~ +150

°C

BV

CBO

Collector-Base Breakdown Voltage

I

C

=500uA, I

E

=0

 40

V

BV

CEO

Collector-Emitter Breakdown Voltage

I

C

=5mA,  I

B

=0

 30

V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

=500uA, I

C

=0

 5

V

 I

CBO

 Collector Cut-off Current

 V

CB 

= 30V, I

E 

= 0

1

µA

 

I

EBO

 Emitter Cut-off Current

 V

EB 

= 3V, I

C 

= 0

1

µA

 

h

FE1

 h

FE2

*DC Current Gain

 V

CE 

= 2V, I

C 

= 20mA

 V

CE 

= 2V, I

C 

= 1A

30
60

 150
 160

400

 V

CE

(sat)

*Collector-Emitter Saturation Voltage

 I

C 

= 2A, I

B 

= 0.2A

 0.3

 0.5

V

 V

BE

(sat)

*Base-Emitter Saturation Voltage

 I

C 

= 2A, I

B 

= 0.2A

 1.0

 2.0

V

 f

T

 Current Gain Bandwidth Product

 V

CE 

= 5V, I

E 

= 0.1A

 90

MHz

 C

ob

 Output Capacitance

 V

CB 

= 10V, I

E 

= 0

 f = 1MHz

 45

pF

1

TO-126

1. Emitter    2.Collector    3.Base