Fairchild Semiconductor N/A KSD882YSTU 数据表
产品代码
KSD882YSTU
KSD882 — NPN Epit
axial Silicon
T
ransistor
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KSD882 Rev. B
1
November 2007
KSD882
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
Recommended Applications
• Audio Frequency Power Amplifier
Featuers
• Low Speed Switcing
• Complement to KSB772.
• Complement to KSB772.
Absolute Maximum Ratings*
T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** PW
≤10ms, Duty Cycle≤50%
Electrical Characteristics.
T
a
=25
°C unless otherwise noted
* Pulse Test: PW
≤350µs, Duty Cycle≤2% Pulsed
Symbol
Parameter
Ratings
Units
BV
CBO
Collector-Base Voltage
40
V
BV
CEO
Collector-Emitter Voltage
30
V
BV
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current(DC)
3
A
I
C
Collector Current(Pulse)**
7
A
I
B
Base Current
0.6
A
P
D
Total Device Dissipation(T
C
=25
°C)
Total Device Dissipation(T
a
=25
°C)
10
1
W
W
W
T
J
, T
STG
Junction and Storage Temperature
- 55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=500uA, I
E
=0
40
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=5mA, I
B
=0
30
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=500uA, I
C
=0
5
V
I
CBO
Collector Cut-off Current
V
CB
= 30V, I
E
= 0
1
µA
I
EBO
Emitter Cut-off Current
V
EB
= 3V, I
C
= 0
1
µA
h
FE1
h
FE2
*DC Current Gain
V
CE
= 2V, I
C
= 20mA
V
CE
= 2V, I
C
= 1A
30
60
60
150
160
160
400
V
CE
(sat)
*Collector-Emitter Saturation Voltage
I
C
= 2A, I
B
= 0.2A
0.3
0.5
V
V
BE
(sat)
*Base-Emitter Saturation Voltage
I
C
= 2A, I
B
= 0.2A
1.0
2.0
V
f
T
Current Gain Bandwidth Product
V
CE
= 5V, I
E
= 0.1A
90
MHz
C
ob
Output Capacitance
V
CB
= 10V, I
E
= 0
f = 1MHz
45
pF
1
TO-126
1. Emitter 2.Collector 3.Base