Korea Electronics N/A Emitter reverse voltag BC337-25 データシート
製品コード
BC337-25
2000. 2. 28
1/2
SEMICONDUCTOR
TECHNICAL DATA
BC337
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
High Current : I
C
=800mA.
DC Current Gain : h
FE
=100
630 (V
CE
=1V, I
c
=100mA).
For Complementary with PNP type BC327.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
800
mA
Emitter Current
I
E
-800
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=45V, I
E
=0
-
-
100
nA
DC Current Gain (Note)
h
FE
V
CE
=1V, I
C
=100mA
100
-
630
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
-
0.7
V
Base-Emitter Voltage
V
BE(ON)
V
CE
=1V, I
C
=300mA
-
-
1.2
V
Transition Frequency
f
T
V
CE
=5V, I
C
=10mA, f=100MHz
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz, I
E
=0
-
16
-
pF
Note : h
FE
Classification none:100
630, 16:100
250, 25:160
400, 40:250
630