Nxp Semiconductors BU2506DX BU Transistor NPN SOT 399 (TOP 3D) 5A 700V BU2506DX データシート
製品コード
BU2506DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2506DX
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.8. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.9. Typical turn-off losses. T
j
= 85˚C
Eoff = f (I
B
); parameter I
C
Fig.10. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85˚C
Fig.11. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
= f (T
hs
)
0
1
2
3
4
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
Tj = 125 C
VBESAT / V
IB / A
IC =
4A
3A
2.5A
3A
2.5A
0.1
1
10
10
9
8
7
6
5
4
3
2
1
0
ts, tf / us
IB / A
ts
tf
IC =
3A
2.5A
0.1
1
10
10
1
0.1
Tj = 25 C
Tj = 125 C
Tj = 125 C
VCESAT / V
IB / A
IC = 2.5A
3A
4A
4A
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0.1
1
10
1000
100
10
IC = 3A
2.5A
Eoff / uJ
IB / A
September 1997
4
Rev 2.400