Nxp Semiconductors BU2506DX BU Transistor NPN SOT 399 (TOP 3D) 5A 700V BU2506DX データシート
製品コード
BU2506DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2506DX
Fig.12. Forward bias safe operating area. T
hs
= 25˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted with heatsink compound and
30
±
5 newton force on the centre of
the envelope.
Fig.13. Forward bias safe operating area. T
hs
= 25˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted without heatsink compound and
30
±
5 newton force on the centre of
the envelope.
1
100
100
10
1
0.1
0.01
10
1000
I
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
Ptot max
= 0.01
II
1
100
100
10
1
0.1
0.01
10
1000
I
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
II
= 0.01
Ptot max
September 1997
5
Rev 2.400