Fairchild Semiconductor N/A KSC2073H2TU データシート

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KSC2073H2TU
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KSC2073 — NPN Ep
it
axial Silico
n T
rans
istor
© 2011 Fairchild Semiconductor Corporation
  www.fairchildsemi.com
KSC2073 Rev. A1
September 2011
KSC2073
NPN Epitaxial Silicon Transistor
Features
• TV Vertical Deflection Output
• Complement to KSA940
• Collector-Base Voltage : V
CBO
 = 150V
Absolute Maximum Ratings
  T
A
 = 25°C unless otherwise noted
Electrical Characteristics  
T
A
 = 25°C unless otherwise noted
h
FE
 Classification
Symbol
Parameter
Value
Units
 V
CBO
 Collector-Base Voltage
150
V
 V
CEO
 Collector-Emitter Voltage
150
V
 V
EBO
 Emitter-Base Voltage
  5
V
 I
C
 Collector Current
 1.5
A
 P
C
 Collector Dissipation (T
= 25
°C)
 25
W
 T
J
 Junction Temperature
150
°C
 T
STG
 Storage Temperature
- 55 to 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
 BV
CBO
 Collector-Base Breakdown Voltage
 I
= 500
μA, I
= 0
150
V
 BV
CEO
 Collector-Emitter Breakdown Voltage  I
= 10mA, I
= 0
150
V
 BV
EBO
 Emitter-Base Breakdown Voltage
 I
= 500
μA, I
= 0
  5
V
 I
CBO
 Collector Cut-off Current
 V
CB 
= 120V, I
= 0
 10
μA
 h
FE
 DC Current Gain
 V
CE 
= 10V, I
= 0.5A
 40
75
140
 V
CE
(sat)
 Collector-Emitter Saturation Voltage
 I
= 500mA, I
= 50mA
  1
V
 f
T
 Current Gain Bandwidth Product
 V
CE 
= 10V, I
= 0.5A
 4
MHz
 C
ob
 Output Capacitance
 V
CB 
=10V, I
= 0,
 f = 1MHz
50
pF
Classification
H1
H2
h
FE
40 ~ 80
60 ~ 125
1.Base    2.Collector    3.Emitter
1
TO-220