Fairchild Semiconductor N/A KSC2073H2TU 数据表
产品代码
KSC2073H2TU
KSC2073 — NPN Ep
it
axial Silico
n T
rans
istor
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KSC2073 Rev. A1
1
September 2011
KSC2073
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
Features
• TV Vertical Deflection Output
• Complement to KSA940
• Collector-Base Voltage : V
• Complement to KSA940
• Collector-Base Voltage : V
CBO
= 150V
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Electrical Characteristics
T
A
= 25°C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
150
V
V
CEO
Collector-Emitter Voltage
150
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
1.5
A
P
C
Collector Dissipation (T
C
= 25
°C)
25
W
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
- 55 to 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 500
μA, I
E
= 0
150
V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 10mA, I
B
= 0
150
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 500
μA, I
C
= 0
5
V
I
CBO
Collector Cut-off Current
V
CB
= 120V, I
E
= 0
10
μA
h
FE
DC Current Gain
V
CE
= 10V, I
C
= 0.5A
40
75
140
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 500mA, I
B
= 50mA
1
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 0.5A
4
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
= 0,
f = 1MHz
50
pF
Classification
H1
H2
h
FE
40 ~ 80
60 ~ 125
1.Base 2.Collector 3.Emitter
1
TO-220