Korea Electronics N/A Emitter reverse voltag BF421 データシート
製品コード
BF421
2002. 6. 25
1/3
SEMICONDUCTOR
TECHNICAL DATA
BF421
SILICON PNP TRIPLE DIFFUSED TYPE
Revision No : 3
HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION.
COLOR TV CHROMA OUTPUT APPLICATIONS.
FEATURES
High Voltage : V
CEO
>-300V
Complementary to BF420.
MAXIMUM RATING (Ta=25
)
TO-92
DIM MILLIMETERS
A
B
C
D
B
C
D
F
G
H
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
2. COLLECTOR
3. BASE
+_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-200V, I
E
=0
-
-
-10
nA
V
CB
=-200V, I
E
=0, Tj=150
-
-
-10
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-50
nA
DC Current Gain
h
FE
V
CE
=-20V, I
C
=-25mA
50
-
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-30mA, I
B
=-5mA
-
-
-0.6
V
Base-Emitter Voltage
V
BE
V
CE
=-20V, I
C
=-25mA
-
-0.75
-
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-10mA
60
-
-
MHz
Reverse Transfer Capacitance
C
re
V
CB
=-30V, I
E
=0, f=1MHz
-
-
1.6
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-50
mA
Peak
I
CP
-100
Collector Power Dissipation
P
C
625
mW
Base Current
I
B
-50
mA
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-65
150