International Rectifier IRG4IBC30FD IGBT N channel TO 220 11A 600V IRG4IBC30FD データシート
製品コード
IRG4IBC30FD
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25°C
Continuous Collector Current
20.3
I
C
@ T
C
= 100°C
Continuous Collector Current
11
I
CM
Pulsed Collector Current
120
A
I
LM
Clamped Inductive Load Current
120
I
F
@ T
C
= 100°C
Diode Continuous Forward Current
8.5
I
FM
Diode Maximum Forward Current
120
Visol
RMS Isolation Voltage, Terminal to Case
2500
V
V
GE
Gate-to-Emitter Voltage
± 20
P
D
@ T
C
= 25°C
Maximum Power Dissipation
45
P
D
@ T
C
= 100°C
Maximum Power Dissipation
18
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbf•in (1.1 N•m)
IRG4IBC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
ULTRAFAST SOFT RECOVERY DIODE
E
G
n -ch an n el
C
V
CES
= 600V
V
CE(on) typ.
= 1.59V
@V
GE
= 15V, I
C
= 17A
Fast CoPack IGBT
3/26/99
Absolute Maximum Ratings
PD- 91751A
W
Parameter
Typ.
Max.
Units
R
θ
JC
Junction-to-Case - IGBT
–––
2.8
R
θ
JC
Junction-to-Case - Diode
–––
4.1
°C/W
R
θ
JA
Junction-to-Ambient, typical socket mount
–––
65
Wt
Weight
2.0 (0.07)
–––
g (oz)
Thermal Resistance
www.irf.com
1
TO-220 FULLPAK
Features
Features
Features
Features
Features
• Very Low 1.59V votage drop
• 2.5kV, 60s insulation voltage
• 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• IGBT co-packaged with HEXFRED
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
• Tighter parameter distribution
• Industry standard Isolated TO-220 Fullpak
• Tighter parameter distribution
• Industry standard Isolated TO-220 Fullpak
TM
outline
Benefits
• Simplified assembly
• Highest efficiency and power density
• HEXFRED
• Highest efficiency and power density
• HEXFRED
TM
antiparallel Diode minimizes
switching losses and EMI