Samsung 1GB 400MHz DDR M368L2923DUN-CCC 전단

제품 코드

M368L2923DUN-CCC

DDR SDRAM

256MB, 512MB, 1GB Unbuffered DIMM

Rev. 0.1 June 2005

CC(DDR400@CL=3)

B3(DDR333@CL=2.5)

Speed @CL2

133MHz

Speed @CL2.5

166MHz

Speed @CL3

200MHz

CL-tRCD-tRP

3-3-3

2.5-3-3

184Pin Unbuffered DIMM based on 512Mb C-die (x8, x16)

• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR333

• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)

• Differential clock inputs(CK and CK)

• DLL aligns DQ and DQS transition with CK transition

• Programmable Read latency : DDR333(2.5 Clock), DDR400(3 Clock)

• Programmable Burst length (2, 4, 8)

• Programmable Burst type (sequential & interleave)

• Edge aligned data output, center aligned data input

• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)

• Serial presence detect with EEPROM
• PCB : Height 1,250 (mil) & single (256, 512MB), double (1GB) sided

• SSTL_2 Interface
• 66pin TSOP II

Pb-Free

package

•

RoHS compliant

1.0 Ordering Information

2.0 Operating Frequencies

Part Number

Density

Organization

Component Composition

Height

M368L3324DUS-C(L)CC/B3

256MB

32M x 64

32Mx16 (K4H511638D) * 4EA

1,250mil

M368L6523DUS-C(L)CC/B3

512MB

64M x 64

64Mx8 (K4H510838D) * 8EA

1,250mil

M381L6523DUM-C(L)CC/B3

512MB

64M x 72

64Mx8 (K4H510838D) * 9EA

1,250mil

M368L2923DUN-C(L)CC/B3

1GB

128M x 64

64Mx8 (K4H510838D) * 16EA

1,250mil

M381L2923DUM-C(L)CC/B3

1GB

128M x 72

64Mx8 (K4H510838D) * 18EA

1,250mil

3.0 Feature