Microchip Technology MCU PIC10F322T-I/OT SOT-23-6 MCP PIC10F322T-I/OT 데이터 시트
제품 코드
PIC10F322T-I/OT
2011 Microchip Technology Inc.
Preliminary
DS41585A-page 177
PIC10(L)F320/322
24.5
Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
Operating temperature
-40°C
T
A
+125°C
Param
No.
Sym.
Characteristic
Min.
Typ†
Max.
Units
Conditions
Program Memory Programming
Specifications
Specifications
D110
V
IHH
Voltage on MCLR/V
PP
pin
8.0
—
9.0
V
(Note 2, Note 3)
D111
I
DDP
Supply Current during Programming
—
—
10
mA
D112
V
DD
for Bulk Erase
2.7
—
V
DD
max.
V
D113
V
PEW
V
DD
for Write or Row Erase
V
DD
min.
—
V
DD
max.
V
D114
I
PPPGM
Current on MCLR/V
PP
during
Erase/Write
—
—
1.0
mA
D115
I
DDPGM
Current on V
DD
during Erase/Write
—
5.0
mA
Program Flash Memory
D121
E
P
Cell Endurance
10K
—
—
E/W
-40
C to +85C (Note 1)
D122
V
PR
V
DD
for Read
V
DD
min.
—
V
DD
max.
V
D123
T
IW
Self-timed Write Cycle Time
—
2
2.5
ms
D124
T
RETD
Characteristic Retention
40
—
—
Year
Provided no other
specifications are violated
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note
1:
Self-write and Block Erase.
2:
Required only if single-supply programming is disabled.
3:
The MPLAB ICD 2 does not support variable V
PP
output. Circuitry to limit the ICD 2 V
PP
voltage must be placed
between the ICD 2 and target system when programming or debugging with the ICD 2.