Texas Instruments THS4513EVM Evaluation Module THS4513EVM THS4513EVM 데이터 시트
제품 코드
THS4513EVM
SLOS472E – AUGUST 2005 – REVISED JANUARY 2013
ELECTRICAL CHARACTERISTICS: V
S+
– V
S–
= 5 V
Test conditions at V
S+
= 2.5 V, V
S–
= –2.5 V, G = 0 dB, CM = open, V
O
= 2 V
PP
, R
F
= 348
Ω
, R
L
= 200-
Ω
differential,
T
A
= +25°C, single-ended input, differential output, and input and output referenced to midsupply, unless otherwise noted.
TEST
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
LEVEL
(1)
AC PERFORMANCE
G = 0 dB, V
O
= 100 mV
PP
1.6
GHz
Small-signal bandwidth
G = 6 dB, V
O
= 100 mV
PP
1.4
GHz
Gain-bandwidth product
G = 6 dB
2.8
GHz
G = 0 dB, V
O
= 2 V
PP
150
Bandwidth for 0-dB flatness
MHz
G = 6 dB, V
O
= 2 V
PP
700
Large-signal bandwidth
G = 0 dB, V
O
= 2 V
PP
1.4
GHz
Slew rate (differential)
5100
V/
μ
s
0.5
Rise time fall time
2-V step
0.5
ns
Settling time to 1%
2.9
Settling time to 0.1%
16
f = 10 MHz
–110
2nd-order harmonic distortion
f = 50 MHz
–80
dBc
f = 100 MHz
–66
f = 10 MHz
–108
C
3rd-order harmonic distortion
f = 50 MHz
–94
dBc
f = 100 MHz
–81
f
C
= 70 MHz
–78
2nd-order intermodulation distortion
V
O
= 2 V
PP
envelope,
f
C
= 140 MHz
–55
200-kHz tone spacing,
dBc
f
C
= 70 MHz
–88
R
L
= 100
Ω
3rd-order intermodulation distortion
f
C
= 140 MHz
–72
f
C
= 70 MHz
77
2nd-order output intercept point
f
C
= 140 MHz
53
200-kHz tone spacing
dBm
R
L
= 100
Ω
f
C
= 70 MHz
42
3rd-order output intercept point
f
C
= 140 MHz
34
1-dB compression point
f
C
= 70 MHz
12.2
dBm
f
C
= 140 MHz
10.8
Noise figure
50-
Ω
system, 10 MHz, G = 6 dB
19.8
dB
Input voltage noise
f > 10 MHz
2.2
nV/
√
Hz
Input current noise
f > 10 MHz
1.7
pA/
√
Hz
DC PERFORMANCE
Open-loop voltage gain (A
OL
)
63
dB
C
T
A
= +25°C
1
4
mV
Input offset voltage
A
T
A
= –40°C to +85°C
1
5
mV
Average offset voltage drift
T
A
= –40°C to +85°C
2.6
μ
V/°C
B
T
A
= +25°C
8
15.5
Input bias current
μ
A
A
T
A
= –40°C to +85°C
8
18.5
Average bias current drift
T
A
= –40°C to +85°C
20
nA/°C
B
T
A
= +25°C
1.6
3.6
Input offset current
μ
A
A
T
A
= –40°C to +85°C
1.6
7
Average offset current drift
T
A
= –40°C to +85°C
4
nA/°C
B
(1)
Test levels: (A) 100% tested at +25°C. Over-temperature limits by characterization and simulation. (B) Limits set by characterization and
simulation. (C) Typical value only for information.
simulation. (C) Typical value only for information.
Copyright © 2005–2013, Texas Instruments Incorporated
3
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