Texas Instruments XILINXPWR-081 Evaluation Module for Xilinx FPGAs XILINXPWR-081 XILINXPWR-081 데이터 시트

제품 코드
XILINXPWR-081
다운로드
페이지 6
SLVL004 
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Link to datasheets at http://focus.ti.com/lit/ds/symlink/TPS78601.pdf, 
http://focus.ti.com/lit/ds/symlink/tps79601.pdf, 
http://focus.ti.com/lit/ds/symlink/tps79401.pdf, and 
http://focus.ti.com/lit/ds/symlink/tps3809k33.pdf.  
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Link to application note SLVA118 http://focus.ti.com/lit/an/slva118/slva118.pdf 
to explore the thermal considerations when using linear regulators.  
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Link to application note SLVA156 http://focus.ti.com/lit/an/slva156/slva156.pdf 
for more details on the soft-start circuit. 
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Link to application note SLVA159 
http://focus.ti.com/lit/an/slva159a/slva159a.pdf when using 3.3-V JTAG ports. 
 
IMPLEMENTATION NOTES: 
 
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Sequencing: Although Xilinx FPGAs do NOT require it, this reference design 
employs sequencing. This practice is consistent with good power supply design 
and prevents the input power supply from being pulled down due to supporting 
in-rush currents for charging large capacitive loads all at once.  
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V
CCO
 minimum ramp time: Met by soft-start circuit consisting of the external 
PMOS transistor Q3 and supporting passive components. 
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Power Dissipation/Thermal Issues: The DDPAK packaged regulators in this 
design are limited to 3W @ T
A
 = 55
C and no airflow, due to power dissipation 
limitation of the package.   
o
  Refer to the application section of the datasheet for maximum power 
dissipation at different ambient conditions as well as guidance on sizing 
the ground plane area underneath the package for heatsinking.   
o
  The linear regulator’s output current  can be computed by rearranging the 
following equation: 
      P
Dmax 
= (V
IN
 – V
CCINT
) * I
CCINTmax
 
     As an example, with V
CCINT
 = 1.2V and P
Dmax 
= 3 W:  
§
§
 
 
I
CCINTmax 
= P
Dmax
 /(V
IN
 – V
CCINT
). 
§
§
 
 
I
CCINTmax = 
1.4 A when V
IN
 = 3.3 V so use the TPS78601 for U2. 
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§
 
 
I
CCINTmax = 
789 mA when V
IN
 = 5.0 V so use the TPS79601 for U2. 
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Soft Start Circuitry: 
o
   NMOS transistor Q4 should be selected so that its threshold voltage, V
T H
is at least 0.9 V below V
IN
 or lower (e.g., V
T H
 < 5.0 V – 1.2 V = 3.8 V or 
V
T H
 < 3.3 V – 1.2 V = 2.1 V).  In addition, the transistor’s R
DSon
 should be 
low enough, when driven by V
IN
, that the voltage drop across the 
transistor at maximum current (e.g., I
CCINTmax
*R
DSon
) does not cause 
V
CCINT
 to fall below its -5% tolerance.   
o
  PMOS transistor Q3 should be selected so that its threshold voltage, V
T H
is at least 0.9 V below the V
CCO
 voltage or lower (e.g., V
T H
 < 3.3 V – 0.9 
V = 2.4 V).  In addition, the transistor’s R
DSon
 should be low enough, 
when driven by V
CCO
 = 3.3 V, that the voltage drop across the transistor at