Freescale Semiconductor FRDM-FXS-MULTI 데이터 시트
MMA8652FC
Sensors
8
Freescale Semiconductor, Inc.
2.3
Electrical characteristics
Table 5. Electrical characteristics at VDD = 2.5 V, VDDIO = 1.8 V, T = 25°C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Supply voltage
VDD
1.95
2.5
3.6
V
Interface supply voltage
VDDIO
1.62
1.8
3.6
V
Low Power mode
I
dd
LP
ODR = 1.563 Hz
6.5
A
ODR = 6.25 Hz
6.5
ODR = 12.5 Hz
6.5
ODR = 50 Hz
15
ODR = 100 Hz
26
ODR = 200 Hz
49
ODR = 400 Hz
94
ODR = 800 Hz
184
Normal mode
I
dd
ODR = 1.563 Hz
27
A
ODR = 6.25 Hz
27
ODR = 12.5 Hz
27
ODR = 50 Hz
27
ODR = 100 Hz
49
ODR = 200 Hz
94
ODR = 400 Hz
184
ODR = 800 Hz
184
Boot-Up current
I
ddBoot
VDD = 2.5 V, the current during
the Boot sequence is integrated
over 0.5 ms, using a
recommended bypass cap
1
mA
Value of capacitor on BYP pin
Cap
–40°C to 85°C
75
100
470
nF
Standby current
I
ddStby
25°C
1.4
5
A
Digital high-level input voltage
SCL, SDA
VIH
VDD = 3.6 V, VDDIO = 3.6 V
0.7*VDDIO
V
Digital low-level input voltage
SCL, SDA
VIL
VDD = 1.95 V, VDDIO = 1.62 V
0.3*VDDIO
V
High-level output voltage
INT1, INT2
VOH
VDD = 3.6 V, VDDIO = 3.6 V,
I
O
= 500
A
0.9*VDDIO
V
Low-level output voltage
INT1, INT2
VOL
VDD = 1.95 V, VDDIO = 1.62 V,
I
O
= 500
A
0.1*VDDIO
V
Low-level output voltage
SDA
VOLS
I
O
= 3 mA
0.4
V
Output source current INT1, INT2
I
source
Voltage high level
VOUT = 0.9 x VDDIO
2
mA
Output sink current INT1, INT2
I
sink
Voltage high level
VOUT = 0.9 x VDDIO
3
mA
Power-on ramp time
Tpr
0.001
1000
ms
Boot time
Tbt
Time from VDDIO on and
VDD > VDD min until I
2
C is
ready for operation,
Cbyp = 100 nf
350
500
µs
Turn-on time
Ton1
Time to obtain valid data from
Standby mode to Active mode
2/ODR + 1 ms
-
Turn-on time
Ton2
Time to obtain valid data from
valid voltage applied
2/ODR + 2 ms
-
Operating temperature range
T
AGOC
–40
85
°C