Fairchild Semiconductor N/A KSC5338DTU 데이터 시트
제품 코드
KSC5338DTU
KSC5338D/KSC5338DW — NPN T
riple Di
ffused Planar Silico
n T
ran
sistor
ran
sistor
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KSC5338D/KSC5338DW Rev. B1
1
May 2010
KSC5338D/KSC5338DW
NPN Triple Diffused Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
Features
• High Voltage Power Switch Switching Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : TO-220 or D
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : TO-220 or D
2
-PAK
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
* Pulse Test : Pulse Width = 5ms, Duty Cycle
≤ 10%
Thermal Characteristics
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
1000
V
V
CEO
Collector-Emitter Voltage
450
V
V
EBO
Emitter-Base Voltage
12
V
I
C
Collector Current (DC)
5
A
I
CP
*Collector Current (Pulse)
10
A
I
B
Base Current (DC)
2
A
I
BP
*Base Current (Pulse)
4
A
P
C
Power Dissipation (T
C
=25
°C)
75
W
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
- 55 to 150
°C
Symbol
Parameter
Rating
Units
R
θjc
Thermal Resistance
Junction to Case
1.65
°C/W
R
θja
Junction to Ambient
62.5
°C/W
T
L
Maximum Lead Temperature for Soldering
270
°C
C
B
E
Equivalent Circuit
1
D
2
-PAK
TO-220
1.Base 2.Collector 3.Emitter
1