Fairchild Semiconductor N/A KSC5338DTU 데이터 시트
제품 코드
KSC5338DTU
KSC5338D/KSC5338DW — NPN T
riple Di
ffused Planar Silico
n T
ran
sistor
ran
sistor
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KSC5338D/KSC5338DW Rev. B1
3
Electrical Characteristics
(Continued) T
a
=25
°C unless otherwise noted
Symbol
Parameter
Test Condition
Min
Typ.
Max. Units
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40
µs)
t
ON
Turn On Time
I
C
=2.5A, I
B1
=500mA,
I
B2
=-1A, V
CC
=250V, R
L
= 100
Ω
500
750
ns
t
STG
Storage Time
1.2
1.5
µs
t
F
Fall Time
100
200
ns
t
ON
Turn On Time
I
C
=2A,
I
B1
=400mA,
I
B2
=-1A,
V
CC
=300V,
R
L
= 150
Ω
T
a
=25
°C
100
150
ns
T
a
=125
°C
150
ns
t
STG
Storage Time
T
a
=25
°C
1.4
2.2
µs
T
a
=125
°C
1.7
µs
t
F
Fall Time
T
a
=25
°C
90
150
ns
T
a
=125
°C
150
ns
t
ON
Turn On Time
I
C
=2.5A,
I
B1
=500mA,
I
B2
=-5mA,
V
CC
=300V,
R
L
= 120
Ω
T
a
=25
°C
120
150
ns
T
a
=125
°C
150
ns
t
STG
Storage Time
T
a
=25
°C
1.8
2.1
µs
T
a
=125
°C
2.6
µs
t
F
Fall Time
T
a
=25
°C
110
150
ns
T
a
=125
°C
160
ns
INDUCTIVE LOAD SWITCHING (V
CC
=15V)
t
STG
Storage Time
I
C
=2.5A,
I
B1
=500mA,
I
B2
=-0.5A,
V
Z
=350V,
L
C
=300
µH
T
a
=25
°C
1.9
2.2
µs
T
a
=125
°C
2.4
µs
t
F
Fall Time
T
a
=25
°C
160
200
ns
T
a
=125
°C
330
ns
t
C
Cross-over Time
T
a
=25
°C
350
500
ns
T
a
=125
°C
750
ns
t
STG
Storage Time
I
C
=2A,
I
B1
=400mA,
I
B2
=-0.4A,
V
Z
=300V,
L
C
=200
µH
T
a
=25
°C
1.95
2.25
µs
T
a
=125
°C
2.9
µs
t
F
Fall Time
T
a
=25
°C
120
150
ns
T
a
=125
°C
270
ns
t
C
Cross-over Time
T
a
=25
°C
300
450
ns
T
a
=125
°C
700
ns
t
STG
Storage Time
I
C
=1A,
I
B1
=100mA,
I
B2
=-0.5A,
V
Z
=300V,
L
C
=200
µH
T
a
=25
°C
0.6
0.8
µs
T
a
=125
°C
1.0
µs
t
F
Fall Time
T
a
=25
°C
70
ns
T
a
=125
°C
110
ns
t
C
Cross-over Time
T
a
=25
°C
80
130
ns
T
a
=125
°C
170
ns