Fairchild Semiconductor N/A MMBTH81 데이터 시트

TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

ON CHARACTERISTICS

V

(BR)CEO

Collector-Emitter Breakdown Voltage*

I

C

 = 1.0 mA, I

B

 = 0

20

V

V

(BR)CBO

Collector-Base Breakdown Voltage

I

C

 = 10 

µ

A, I

E

 = 0

20

V

V

(BR)EBO

Emitter-Base Breakdown Voltage

I

E

 = 10 

µ

A, I

C

 = 0

3.0

V

I

CBO

Collector Cutoff Current

V

CB

 = 10 V, I

E 

 = 0

100

nA

I

EBO

Emitter Cutoff Current

V

EB

 = 2.0 V, I

C 

 = 0

100

nA

h

FE

DC Current Gain

I

C

 = 5.0 mA, V

CE

 = 10 V

60

V

CE(

sat

)

Collector-Emitter Saturation Voltage

I

C

 = 5.0 mA, I

B

 = 0.5 mA

0.5

V

V

BE(

on

)

Base-Emitter On Voltage

I

C

 = 5.0 mA, V

CE

 = 10 V

0.9

V

SMALL SIGNAL CHARACTERISTICS

f

T

Current Gain - Bandwidth Product

I

C

 = 5.0 mA, V

CE

 = 10 V,

f = 100 MHz

600

MHz

C

cb

Collector-Base Capacitance

V

CB

 = 10 V, I

E

 = 0, f = 1.0 MHz

0.85

pF

C

ce

Collector Emitter Capcitance

V

CB

 = 10 V, I

B

 = 0, f = 1.0 MHz

0.65

pF

Pulse Test: Pulse Width 

≤ 

300 

µ

s, Duty Cycle 

≤ 

2.0%

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

(continued)

PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1
Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026
Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)

0.1

1

10

100

0

20

40

60

80

100

120

140

160

180

200

0.1

1

10

100

0.01

0.02

0.05

0.1

0.2

0.5

1