Fairchild Semiconductor N/A MJD112TF 데이터 시트
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MJD112TF
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MJD112 Rev. B
MJD1
12
NPN
Silicon Darlington T
ransistor
tm
November 2006
MJD112
NPN Silicon Darlington Transistor
Features
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
Absolute Maximum Ratings*
T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
T
a
=25
°C unless otherwise noted
* Pulse Test: Pulse Width
≤300µs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
100
V
V
CEO
Collector-Emitter Voltage
100
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
2
A
I
CP
Collector Current (Pulse)
4
A
I
B
Base Current
50
mA
P
C
Collector Dissipation (T
C
=25
°C)
20
W
Collector Dissipation (T
a
=25
°C)
1.75
W
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
I
C
= 30mA, I
B
= 0
100
V
I
CEO
Collector Cut-off Current
V
CE
= 50V, I
B
= 0
20
µA
I
CBO
Collector Cut-off Current
V
CB
= 100V, I
B
= 0
20
µA
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
2
mA
h
FE
* DC Current Gain
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
500
1000
200
12K
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 2A, I
B
= 8mA
I
C
= 4A, I
B
= 40mA
2
3
3
V
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= 4A, I
B
= 40mA
4
V
V
BE
(on)
* Base-Emitter On Voltage
V
CE
= 3A, I
C
= 2A
2.8
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 0.75A
25
MHz
C
ob
Output Capacitance
V
CB
= 10V, I
E
= 0
f = 0.1MHz
100
pF
1.Base 2.Collector 3.Emitter
D-PAK
1
R1
10k
Ω
≅
R2
0.6k
Ω
≅
Equivalent Circuit
B
E
C
R1
R2