Infineon 1024MB, 800MHz, DDR II, PC6400, CL6 HYS64T128000EU-2.5C2 사용자 설명서
제품 코드
HYS64T128000EU-2.5C2
HYS[64/72]T512020EU–[25F/2.5/3S]–A
Unbuffered DDR2 SDRAM Modules
Internet Data Sheet
Rev. 1.0, 2008-06
15
06112008-YHWK-B105
3
Electrical Characteristics
This chapter contains speed grade definition, AC timing parameter and ODT tables.
3.1
Absolute Maximum Ratings
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 8
Absolute Maximum Ratings
TABLE 9
Environmental Requirements
Symbol
Parameter
Rating
Unit
Note
Min.
Max.
V
DD
Voltage on
V
DD
pin relative to
V
SS
–1.0
+2.3
V
1)
1) When
V
DD
and
V
DDQ
and
V
DDL
are less than 500 mV;
V
REF
may be equal to or less than 300 mV.
V
DDQ
Voltage on
V
DDQ
pin relative to
V
SS
–0.5
+2.3
V
V
DDL
Voltage on
V
DDL
pin relative to
V
SS
–0.5
+2.3
V
V
IN
,
V
OUT
Voltage on any pin relative to
V
SS
–0.5
+2.3
V
Parameter
Symbol
Values
Unit
Note
Min.
Max.
Operating temperature (ambient)
T
OPR
0
+55
°C
1)
1) The component maximum case temperature (Tcase) shall not exceed the value specified in the DDR2 DRAM component specification.
Storage Temperature
T
STG
– 50
+100
°C
2)
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Barometric Pressure (operating & storage)
PBar
+69
+105
kPa
3)
3) Up to 3000 m.
Operating Humidity (relative)
H
OPR
10
90
%
Storage Humidity (without condensation)
H
STG
5
95
%