Philips SA7016 사용자 설명서

Philips Semiconductors

Product specification

SA7016

1.3GHz low voltage fractional-N synthesizer

1999 Nov 04

4

In accordance with the Absolute Maximum Rating System (IEC 134).

V

DD

Digital supply voltage

–0.3

+5.5

V

V

DDCP

Analog supply voltage

–0.3

+5.5

V

∆

V

DDCP

–V

DD

Difference in voltage between V

DDCP and 

V

DD

 (V

DDCP

 

≥

 V

DD

)

–0.3

+2.8

V

V

n

Voltage at pins 1, 2, 5, 6, 11 to 16

–0.3

V

DD 

+ 0.3

V

V

1

Voltage at pin 8, 9

–0.3

V

DDCP

+ 0.3

V

∆

V

GND

Difference in voltage between GND

CP

 and GND (these pins should

be connected together)

–0.3

+0.3

V

T

stg

Storage temperature

–55

+125

_

C

T

amb

Operating ambient temperature

–40

+85

_

C

T

j

Maximum junction temperature

150

_

C

Inputs and outputs are protected against electrostatic discharge in
normal handling. However, to be totally safe, it is desirable to take
normal precautions appropriate to handling MOS devices.

R

th j–a

Thermal resistance from junction to ambient in free air

120

K/W