Philips BGA2003 Manual Do Utilizador

Página de 12
1999 Jul 23
2
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
FEATURES
Low current
Very high power gain
Low noise figure
Integrated temperature compensated biasing
Control pin for adjustment bias current
Supply and RF output pin combined.
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Low noise amplifiers
Satellite television tuners (SATV)
High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
PINNING
PIN
DESCRIPTION
1
GND
2
RF in
3
CTRL (bias current control)
4
V
S
+ RF out
handbook, halfpage
Top view
MAM427
2
1
4
3
BIAS
CIRCUIT
CTRL
RFin
GND
V
S+RFout
Marking code: A3.
Fig.1  Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
S
DC supply voltage
RF input AC coupled
4.5
V
I
S
DC supply current
V
VS-OUT
= 2.5 V; I
CTRL
= 1 mA;
RF input AC coupled
11
mA
MSG
maximum stable gain
V
VS-OUT
= 2.5 V; f = 1800 MHz;
T
amb
= 25
°
C
16
dB
NF
noise figure
V
VS-OUT
= 2.5 V; f = 1800 MHz;
Γ
S
=
Γ
opt
1.8
dB