Philips BGA2003 Manual Do Utilizador
1999 Jul 23
3
Philips Semiconductors
Product specification
Silicon MMIC amplifier
BGA2003
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; T
RF input AC coupled; T
j
= 25
°
C; unless otherwise specified.
Note
1. See application note RNR-T45-99-B-0514.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
supply voltage
RF input AC coupled
−
4.5
V
V
CTRL
voltage on control pin
−
2
V
I
S
supply current (DC)
forced by DC voltage on RF input
or I
or I
CTRL
−
30
mA
I
CTRL
control current
−
3
mA
P
tot
total power dissipation
T
s
≤
100
°
C
−
135
mW
T
stg
storage temperature
−
65
+150
°
C
T
j
operating junction temperature
−
150
°
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
350
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
S
supply current
V
VS-OUT
= 2.5 V; I
CTRL
= 0.4 mA
3
4.5
6
mA
V
VS-OUT
= 2.5 V; I
CTRL
= 1.0 mA
8
11
15
mA
MSG
maximum stable gain
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz
−
24
−
dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz
−
16
−
dB
|
s
21
|
2
insertion power gain
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz
18
19
−
dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz
13
14
−
dB
s
12
isolation
V
VS-OUT
= 2.5 V; I
VS-OUT
= 0;
f = 900 MHz
−
26
−
dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 0;
f = 1800 MHz
−
20
−
dB
NF
noise figure
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz;
Γ
S
=
Γ
opt
−
1.8
2
dB
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz;
Γ
S
=
Γ
opt
−
1.8
2
dB
IP3
(in)
input intercept point; note 1
V
VS-OUT
= 2.3 V; I
VS-OUT
= 3.6 mA;
f = 900 MHz
−
−
6.5
−
dBm
V
VS-OUT
= 2.3 V; I
VS-OUT
= 3.5 mA;
f = 1800 MHz
−
−
4.8
−
dBm