Intel D525 AU80610006225AA Manual Do Utilizador

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AU80610006225AA
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Thermal Specifications and Design Considerations
60
Datasheet
location on the die, and time based variations in the die temperature measurement. 
Time based variations can occur when the sampling rate of the thermal diode (by the 
thermal sensor) is slower than the rate at which the T
J
 temperature can change. 
Offset between the thermal diode based temperature reading and the Intel Thermal 
Monitor reading may be characterized using the Intel Thermal Monitor’s Automatic 
mode activation of the thermal control circuit. This temperature offset must be taken 
into account when using the processor thermal diode to implement power management 
events. This offset is different than the diode T
offset
 value programmed into the 
processor Model Specific Register (MSR).
 provide the diode interface and specifications. Transistor 
model parameters shown in 
 providing more accurate temperature 
measurements when the diode ideality factor is closer to the maximum or minimum 
limits. Contact your external sensor supplier for their recommendation. The thermal 
diode is separate from the Thermal Monitor’s thermal sensor and cannot be used to 
predict the behavior of the Thermal Monitor.
NOTES:
1.
Intel does not support or recommend operation of the thermal diode under reverse bias. 
2.
Characterized across a temperature range of 50–100°C.
3.
Not 100% tested. Specified by design characterization.
4.
The ideality factor, nQ, represents the deviation from ideal transistor model behavior as 
exemplified by the equation for the collector current:
I
C
 = I
S
 * (e 
qV
BE
/n
Q
kT
 –1)
where I
S
 = saturation current, q = electronic charge, V
BE
 = voltage across the transistor 
base emitter junction (same nodes as VD), k = Boltzmann Constant, and T = absolute 
temperature (Kelvin).
5.
The series resistance, R
T
, provided in the Diode Model Table (
more accurate readings as needed. 
Table 7-47.Thermal Diode Interface
Signal Name
Pin/Ball Number
Signal Description
THRMDA_1
D30
Thermal diode anode
THRMDA_2
C30
Thermal diode anode (for dual-core only)
THRMDC_1
E30
Thermal diode cathode
THRMDC_2
D31
Thermal diode cathode (for dual-core only)
Table 7-48.Thermal Diode Parameters using Transistor Model
Symbol
Parameter
Min
Typ
Max
Unit
Notes
IFW
Forward Bias Current
5
200
μA
1
IE
Emitter Current
5
200
μA
1
nQ
Transistor Ideality
0.997
1.001
1.015
2,3,4
Beta
0.25
0.65
2,3
RT
Series Resistance
2.79
4.52
6.24
Ω
2,5