Intel i3-3130M AW8063801111500 Manual Do Utilizador

Códigos do produto
AW8063801111500
Página de 112
Datasheet, Volume 1
87
Electrical Specifications 
Notes:
1.
V
AXG 
is VID based rail.
2.
The V
AXG_MIN
 and V
AXG_MAX
 loadlines represent static and transient limits.
3.
The loadlines specify voltage limits at the die measured at the VAXG_SENSE and VSSAXG_SENSE lands. 
Voltage regulation feedback for voltage regulator circuits must also be taken from processor VAXG_SENSE 
and VSSAXG_SENSE lands. 
4.
PSx refers to the voltage regulator power state as set by the SVID protocol. 
5.
Each processor is programmed with a maximum valid voltage identification value (VID) that is set at 
manufacturing and cannot be altered. Individual maximum VID values are calibrated during manufacturing 
such that two processors at the same frequency may have different settings within the VID range. This 
differs from the VID employed by the processor during a power management event (Adaptive Thermal 
Monitor, Enhanced Intel SpeedStep Technology, or Low Power States).
Table 7-6.
Processor Graphics VID based (V
AXG
) Supply DC Voltage and Current 
Specifications
 
Symbol
Parameter
Min
Typ
Max
Unit
Note
V
AXG
 GFX_VID 
Range
GFX_VID Range for V
AXG
0.2500
1.5200
V
1
LL
AXG
V
AXG
 Loadline Slope
4.1
m
2, 3
V
AXG
TOB
V
CC
 Tolerance Band
PS0, PS1
PS2
19
11.5
mV
2, 3, 4
V
AXG
Ripple
Ripple:
PS0
PS1
PS2
±10
±10
-10/+15
mV
2, 3, 4
I
AXG
Current for Processor Graphics 
core
35
A
I
AXG_TDC
Sustained current for Processor 
Graphics core
25
A
Table 7-7.
DDR3 Signal Group DC Specifications (Sheet 1 of 2)
Symbol
Parameter
Min
Typ
Max
Units
Notes
1,7
V
IL
Input Low Voltage
SM_VREF 
– 0.1
V
2, 4, 9
V
IH
Input High Voltage
SM_VREF 
+ 0.1
V
3, 9
V
IL
Input Low Voltage 
(SM_DRAMPWROK)
V
DDQ
*0.55 
– 0.1
V
8
V
IH
Input High Voltage
(SM_DRAMPWROK)
V
DDQ
*0.55 
+ 0.1
V
8
V
OL
Output Low Voltage
(V
DDQ
 / 2)* (R
ON 
/(R
ON
+R
TERM
))
6
V
OH
Output High Voltage
V
DDQ
 - ((V
DDQ
 / 2)* 
(R
ON
/(R
ON
+R
TERM
))
V
4, 6
R
ON_UP(DQ)
DDR3 Data Buffer pull-
up Resistance
20
28.6
40
5
R
ON_DN(DQ)
DDR3 Data Buffer pull-
down Resistance
20
28.6
40
5
R
ODT(DQ)
DDR3 On-die 
termination equivalent 
resistance for data 
signals
40
50
60
V
ODT(DC)
DDR3 On-die 
termination DC working 
point (driver set to 
receive mode)
0.4*V
DDQ
0.5*V
DDQ
0.6*V
DDQ
V