Freescale Semiconductor Tower System Module S12G240 TWR-S12G240 TWR-S12G240 Ficha De Dados

1018

Freescale Semiconductor

The Erase Verify P-Flash Section command will verify that a section of code in the P-Flash memory is
erased. The Erase Verify P-Flash Section command defines the starting point of the code to be verified and
the number of phrases.

Upon clearing CCIF to launch the Erase Verify P-Flash Section command, the Memory Controller will
verify the selected section of Flash memory is erased. The CCIF flag will set after the Erase Verify P-Flash
Section operation has completed. If the section is not erased, it means blank check failed, both MGSTAT
bits will be set.

The Read Once command provides read access to a reserved 64 byte field (8 phrases) located in the
nonvolatile information register of P-Flash. The Read Once field is programmed using the Program Once
command described in

. The Read Once command must not be executed from the Flash

block containing the Program Once reserved field to avoid code runaway.

000

0x03

Global address [17:16] of

a P-Flash block

001

Global address [15:0] of the first phrase to be verified

010

Number of phrases to be verified

FSTAT

ACCERR

Set if CCOBIX[2:0] != 010 at command launch

Set if command not available in current mode (see

)

Set if an invalid global address [17:0] is supplied see

1

1

As defined by the memory map for FTMRG96K1.

Set if a misaligned phrase address is supplied (global address [2:0] != 000)

Set if the requested section crosses a the P-Flash address boundary

FPVIOL

None

MGSTAT1

Set if any errors have been encountered during the read

2

or if blank check failed.

2

As found in the memory map for FTMRG96K1.

MGSTAT0

Set if any non-correctable errors have been encountered during the read

 or if

blank check failed.

000

0x04

Not Required