Freescale Semiconductor Tower System Module S12G240 TWR-S12G240 TWR-S12G240 Ficha De Dados

Freescale Semiconductor

1171

Only the operations marked ‘OK’ in

Flash and EEPROM blocks. Some operations cannot be executed simultaneously because certain hardware
resources are shared by the two memories. The priority has been placed on permitting Program Flash reads
while program and erase operations execute on the EEPROM, providing read (P-Flash) while write
(EEPROM) functionality.

0x08

Erase All Blocks

Erase all EEPROM (and P-Flash) blocks.
An erase of all Flash blocks is only possible when the FPLDIS, FPHDIS, and FPOPEN
bits in the FPROT register and the DPOPEN bit in the EEPROT register are set prior to
launching the command.

0x09

Erase Flash Block

Erase a EEPROM (or P-Flash) block.
An erase of the full EEPROM block is only possible when DPOPEN bit in the EEPROT
register is set prior to launching the command.

0x0B

Unsecure Flash

Supports a method of releasing MCU security by erasing all EEPROM (and P-Flash)
blocks and verifying that all EEPROM (and P-Flash) blocks are erased.

0x0D

Set User Margin

Level

Specifies a user margin read level for the EEPROM block.

0x0E

Set Field Margin

Level

Specifies a field margin read level for the EEPROM block (special modes only).

0x10

Erase Verify

EEPROM Section

Verify that a given number of words starting at the address provided are erased.

0x11

Program

EEPROM

Program up to four words in the EEPROM block.

0x12

Erase EEPROM

Sector

Erase all bytes in a sector of the EEPROM block.

OK

OK

OK

1

A ‘Margin Read’ is any read after executing the margin setting commands
‘Set User Margin Level’ or ‘Set Field Margin Level’ with anything but the
‘normal’ level specified. See the Note on margin settings in

and

2

The ‘Mass Erase’ operations are commands ‘Erase All Blocks’ and ‘Erase
Flash Block’

OK