Fairchild Semiconductor N/A BD13816STU Ficha De Dados
Códigos do produto
BD13816STU
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD136/
138/
140
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW=350
µ
s, duty Cycle=2% Pulsed
h
FE
Classificntion
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage : BD136
: BD138
: BD140
: BD140
- 45
- 60
- 80
- 60
- 80
V
V
V
V
V
V
CEO
Collector-Emitter Voltage : BD136
: BD138
: BD140
: BD140
- 45
- 60
- 80
- 60
- 80
V
V
V
V
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 1.5
A
I
CP
Collector Current (Pulse)
- 3.0
A
I
B
Base Current
- 0.5
A
P
C
Collector Dissipation (T
C
=25
°
C)
12.5
W
P
C
Collector Dissipation (T
a
=25
°
C)
1.25
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: BD136
: BD138
: BD140
: BD138
: BD140
I
C
= - 30mA, I
B
= 0
- 45
- 60
- 80
- 60
- 80
V
V
V
V
V
I
CBO
Collector Cut-off Current
V
CB
= - 30V, I
E
= 0
- 0.1
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 10
µ
A
h
FE1
h
FE2
h
FE3
* DC Current Gain
V
CE
= - 2V, I
C
= - 5mA
V
CE
= - 2V, I
C
= - 0.5A
V
CE
= - 2V, I
C
= - 150mA
25
25
40
25
40
250
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= - 500mA, I
B
= - 50mA
- 0.5
V
V
BE
(on)
* Base-Emitter ON Voltage
V
CE
= - 2V, I
C
= - 0.5A
- 1
V
Classification
6
10
16
h
FE3
40 ~ 100
63 ~ 160
100 ~ 250
BD136/138/140
Medium Power Linear and Switching
Applications
Applications
• Complement to BD135, BD137 and BD139 respectively
1
TO-126
1. Emitter 2.Collector 3.Base