Fairchild Semiconductor N/A MMBT100 Ficha De Dados
Códigos do produto
MMBT100
PN100/PN100A/MMBT100/MMBT
100A —
NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
PN100/PN100A/MMBT100/MMBT100A Rev. C1
2
Electrical Characteristics
T
C
=25
°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300μs, Duty Cycle ≤ 2.0%
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 10
μA, I
E
= 0
75
V
BV
CEO
Collector-Emitter Breakdown Voltage *
I
C
= 1mA, I
B
= 0
45
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 10
μA, I
C
= 0
6.0
V
I
CBO
Collector-Base Cutoff Current
V
CB
= 60V
50
nA
I
CES
Collector-Emiitter Cutoff Current
V
CE
= 40V
50
nA
I
EBO
Emitter Cutoff Current
V
EB
= 4V
50
nA
On Characteristics
h
FE
DC Current Gain
I
C
= 100
μA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V*
I
C
= 150mA, V
CE
= 5.0V *
100
100A
100
100A
100A
100
100A
100
100A
100A
80
240
100
300
100
100
100
100
300
100
100
100
450
600
600
350
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 1.0mA
I
C
= 200mA, I
B
= 20mA
0.2
0.4
0.4
V
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 1.0mA
I
C
= 200mA, I
B
= 20mA
0.85
1.0
V
V
V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product
V
CE
= 20V, I
C
= 20mA
250
MHz
C
obo
Output Capacitance
V
CB
= 5.0V, f = 1.0MHz
4.5
pF
NF
Noise Figure
I
C
= 100
μA, V
CE
= 5.0V
R
G
= 2.0k
Ω, f = 1.0KHz
100
100A
100A
5.0
4.0
4.0
dB
dB
dB