Fairchild Semiconductor N/A MMBT100 Ficha De Dados
Códigos do produto
MMBT100
PN100/PN100A/MMBT100/MMBT
100A —
NPN General Purpose Amplifier
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
PN100/PN100A/MMBT100/MMBT100A Rev. C1
3
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Input and Output Capacitance
vs Reverse Voltag
vs Collector Current
10
20
30
50
100
200 300
500
0
100
200
300
400
I - COLLECTOR CURRENT (mA)
h
- TYP
ICA
L PULSED
CURR
ENT GA
IN
C
FE
125 °C
25 °C
- 40 °C
Vce = 5V
Voltage vs Collector Current
1
10
100
400
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V
-
CO
LL
EC
TO
R-
EM
IT
T
E
R VO
L
T
A
G
E
(
V
)
C
CE
S
A
T
25 °C
- 40 °C
125 °C
β
= 10
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
300
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
C
O
LL
EC
TO
R-
EM
IT
T
E
R
VO
L
T
A
G
E
(
V
)
β
= 10
C
BE
S
A
T
25 °C
- 40 °C
125 °C
Collector Current
1
10
100
500
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-E
M
ITTE
R
O
N
VO
L
T
A
G
E
(
V
)
C
BE
O
N
V = 5V
CE
25 °C
- 40 °C
125 °C
25
50
75
100
125
150
0.1
1
10
T - AMBIE NT TEMP ERATURE ( C)
I
-
C
O
LL
E
C
TOR
C
U
R
R
E
N
T (
n
A
)
A
CBO
V = 60V
°
CB
0.1
1
10
100
0.1
1
10
100
V - COLLECTOR VOLTAGE (V)
CA
P
A
CI
T
A
N
C
E
(
p
F)
Cib
Cob
f = 1.0 MHz
ce