Fairchild Semiconductor N/A MJE200STU Ficha De Dados
Códigos do produto
MJE200STU
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJE
200
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
40
V
V
CEO
Collector-Emitter Voltage
25
V
V
EBO
Emitter- Base Voltage
8
V
I
C
Collector Current
5
A
P
C
Collector Dissipation (T
C
=25
°
C)
15
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=10mA, I
B
=0
25
V
I
CBO
Collector Cut-off Current
V
CB
=40V, I
E
=0
V
CB
=40V, I
E
=0 @ T
J
=125
°
C
100
100
100
nA
µ
A
I
EBO
Emitter Cut-off Current
V
BE
=8V, I
C
=0
100
nA
h
FE
DC Current Gain
V
CE
=1V, I
C
=500mA
V
CE
=1V, I
C
=2A
V
CE
=2V, I
C
=5A
70
45
10
45
10
180
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=500mA, I
B
=50mA
I
C
=2A, I
C
=200mA
I
C
=5A, I
B
=1A
0.3
0.75
1.8
V
V
V
V
V
V
BE
(sat)
Base- Emitter Saturation Voltage
I
C
=5A, I
B
=1A
2.5
V
V
BE
(on)
Base-Emitter ON Voltage
V
CE
=1V, I
C
=2A
1.6
V
f
T
Current Gain Bandwidth Product
V
CE
=10V, I
C
=100mA
65
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=0.1MHz
80
pF
MJE200
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : f
• High Current Gain Bandwidth Product : f
T
=65MHz @ I
C
=100mA (Min.)
• Complement to MJE210
1
TO-126
1. Emitter 2.Collector 3.Base