Справочник Пользователя для Cypress STK14D88
STK14D88
Document Number: 001-52037 Rev. **
Page 5 of 17
Figure 5. SRAM READ Cycle 2: E Controlled
SRAM READ Cycles #1 and #2
NO.
Symbols
Parameter
STK14D88-25 STK14D88-35 STK14D88-45
Unit
Min
Max
Min
Max
Min
Max
#1
#2
Alt.
1
t
ELQV
t
ACS
Chip Enable Access Time
25
35
45
ns
2
t
AVAV
t
ELEH
t
RC
Read Cycle Time
25
35
45
ns
3
t
AVQV
t
AVQV
[5]
t
AA
Address Access Time
25
35
45
ns
4
t
GLQV
t
OE
Output Enable to Data Valid
12
15
20
ns
5
t
AXQX
t
AXQX
[5]
t
OH
Output Hold after Address Change
3
3
3
ns
6
t
ELQX
t
LZ
Address Change or Chip Enable to
Output Active
Output Active
3
3
3
ns
7
t
EHQZ
t
HZ
Address Change or Chip Disable to
Output Inactive
Output Inactive
10
13
15
ns
8
t
GLQX
t
OLZ
Output Enable to Output Active
0
0
0
ns
9
t
GHQZ
t
OHZ
Output Disable to Output Inactive
10
13
15
ns
10
t
ELICCH
t
PA
Chip Enable to Power Active
0
0
0
ns
11
t
EHICCL
t
PS
Chip Disable to Power Standby
25
35
45
ns
Figure 4. SRAM READ Cycle 1: Address Controlled
Notes
4. W must be high during SRAM READ cycles.
5. Device is continuously selected with E and G both low.
6. Measured ± 200mV from steady state output voltage.
7. HSB must remain high during READ and WRITE cycles.
5. Device is continuously selected with E and G both low.
6. Measured ± 200mV from steady state output voltage.
7. HSB must remain high during READ and WRITE cycles.
DATA VALID
t
AXQX
t
AVQV
DQ (DATA OUT)
ADDRESS
t
AVAV