Справочник Пользователя для Intel E8501

Intel

E8500/E8501 Chipset North Bridge (NB) and eXternal Memory

Bridge (XMB) Thermal/Mechanical Design Guide

Thermal Specifications

3.1

Thermal Design Power (TDP)

Analysis indicates that real applications are unlikely to cause the E8500/E8501 chipset NB/XMB
components to consume maximum power dissipation for sustained time periods. Therefore, in
order to arrive at a more realistic power level for thermal design purposes, Intel characterizes
power consumption based on known platform benchmark applications. The resulting power
consumption is referred to as the Thermal Design Power (TDP). TDP is the target power level that
the thermal solutions should be designed to. TDP is not the maximum power that the chipset can
dissipate.

For TDP specifications, see

Table 3-1

for the E8500 chipset NB component,

Table 3-2

for the

E8501 chipset NB component,

Table 3-3

for the E8500 chipset XMB component and

Table 3-4

for

the E85001 chipset XMB component FC-BGA packages have poor heat transfer capability into the
board and have minimal thermal capability without a thermal solution. Intel recommends that
system designers plan for one or more heatsinks when using the E8500/E8501 chipsets NB/XMB
components.

3.2

Die Case Temperature Specifications

To ensure proper operation and reliability of the E8500/E8501 chipset NB/XMB components, the
die temperatures must be at or between the maximum/minimum operating temperature ranges as
specified in

and

. System and/or component level thermal

solutions are required to maintain these temperature specifications. Refer to

Section 5

for

guidelines on accurately measuring package die temperatures.

NOTE:

1. These specifications are based on silicon characterization, however, they may be updated as further data