Техническая Спецификация для Freescale Semiconductor MC56F8006 Demo board MC56F8006DEMO MC56F8006DEMO

Freescale Semiconductor

45

Junction-to-ambient thermal resistance determined per JEDEC JESD51–3 and JESD51–6. 
Thermal test board meets JEDEC specification for this package.

Junction-to-board thermal resistance determined per JEDEC JESD51–8. Thermal test 
board meets JEDEC specification for the specified package.

Junction-to-case at the top of the package determined using MIL-STD 883 Method 1012.1. 
The cold plate temperature is used for the case temperature. Reported value includes the 
thermal resistance of the interface layer.

Thermal characterization parameter indicating the temperature difference between the 
package top and the junction temperature per JEDEC JESD51–2. When Greek letters are 
not available, the thermal characterization parameter is written as Psi-JT

Junction temperature is a function of die size, on-chip power dissipation, package thermal 
resistance, mounting site (board) temperature, ambient temperature, air flow, power 
dissipation of other components on the board, and board thermal resistance.

See 

,” for more detail on thermal design 

considerations.

This section includes information about recommended operating conditions.

Junction to ambient

Natural convection

Single layer board 

(1s)

R

JA

79

°C/W

Junction to ambient

Natural convection

Four layer board 

(2s2p)

R

JMA

55

°C/W

Junction to ambient 

(@200 ft/min)

Single layer board 

(1s)

R

JMA

66

°C/W

Junction to ambient 

(@200 ft/min)

Four layer board 

(2s2p)

R

JMA

48

°C/W

Junction to board

R

JB

34

°C/W

Junction to case

R

JC

20

°C/W

Junction to package top

Natural Convection



JT

4

°C/W