Техническая Спецификация для Fairchild Semiconductor N/A 2SC5200OTU

Fairchild Semiconductor

Модели

2SC5200OTU

2SC5200/FJL4315 — NPN Epit

axial Silicon T

ransistor

© 2009 Fairchild Semiconductor Corporation

www.fairchildsemi.com

2SC5200/FJL4315 Rev. C

2

Electrical Characteristics*

T

a

=25

°C unless otherwise noted

* Pulse Test: Pulse Width=20

µs, Duty Cycle≤2%

Ordering Information

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BV

CBO

Collector-Base Breakdown Voltage

I

C

=5mA, I

E

=0

250

V

BV

CEO

Collector-Emitter Breakdown Voltage

I

C

=10mA, R

BE

=

∞

250

V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

=5mA, I

C

=0

5

V

I

CBO

Collector Cut-off Current

V

CB

=230V, I

E

=0

5.0

µA

I

EBO

Emitter Cut-off Current

V

EB

=5V, I

C

=0

5.0

µA

h

FE1

DC Current Gain

V

CE

=5V, I

C

=1A

55

160

h

FE2

DC Current Gain

V

CE

=5V, I

C

=7A

35

60

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C

=8A, I

B

=0.8A

0.4

3.0

V

V

BE

(on)

Base-Emitter On Voltage

V

CE

=5V, I

C

=7A

1.0

1.5

V

f

T

Current Gain Bandwidth Product

V

CE

=5V, I

C

=1A

30

MHz

C

ob

Output Capacitance

V

CB

=10V, f=1MHz

200

pF

Part Number

Marking

Package

Packing Method

Remarks

2SC5200RTU

C5200R

TO-264

TUBE

hFE1 R grade

2SC5200OTU

C5200O

TO-264

TUBE

hFE1 O grade

FJL4315RTU

J4315R

TO-264

TUBE

hFE1 R grade

FJL4315OTU

J4315O

TO-264

TUBE

hFE1 O grade