Техническая Спецификация для Fairchild Semiconductor N/A 2SC5200OTU
Модели
2SC5200OTU
2SC5200/FJL4315 — NPN Epit
axial Silicon T
ransistor
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2SC5200/FJL4315 Rev. C
3
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain ( R grade )
Figure 3. DC current Gain ( O grade )
Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage
Figure 6. Base-Emitter Saturation Voltage
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
I
B
= 0
I
B
=200mA
I
B
= 120mA
I
B
= 140mA
I
B
= 160mA
I
B
= 180mA
I
B
= 100mA
I
B
= 60mA
I
B
= 80mA
I
B
= 40mA
I
C
[A
],
CO
L
L
E
C
T
O
R
CUR
REN
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1
10
1
10
100
Vce=5V
Tj=-25
o
C
Tj=25
o
C
Tj=125
o
C
h
FE
, DC CURR
E
N
T GAIN
Ic[A], COLLECTOR CURRENT
1
10
1
10
100
Vce=5V
Tj=-25
o
C
Tj=25
o
C
Tj=125
o
C
h
FE
, DC CURR
E
N
T GAIN
Ic[A], COLLECTOR CURRENT
0.1
1
10
1
10
100
1000
10000
Ic=10Ib
Tj=-25
o
C
Tj=25
o
C
Tj=125
o
C
Vce
(sa
t)[m
V], SA
TURAT
ION VOLT
AGE
Ic[A], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
12
V
CE
= 5V
I
C
[A
], CO
LL
E
C
T
O
R
CUR
RE
NT
V
BE
[V], BASE-EMITTER VOLTAGE
0.1
1
10
100
1000
10000
Ic=10Ib
Tj=-25
o
C
Tj=25
o
C
Tj=125
o
C
V
b
e(
sat)
[mV], SATURATION
V
O
L
T
AGE
Ic[A], COLLECTOR CURRENT