Техническая Спецификация для Fairchild Semiconductor N/A MMBTH11
Модели
MMBTH11
3
MPSH11/MMBTH11, Rev. B
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Sustaining Voltage*
I
C
= 1.0 mA, I
B
= 0
25
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
µ
A, I
E
= 0
30
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
µ
A, I
C
= 0
3.0
V
I
CBO
Collector Cutoff Current
V
CB
= 25 V, I
E
= 0
100
nA
I
EBO
Emitter Cutoff Current
V
EB
= 2.0 V, I
C
= 0
100
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 4.0 mA, V
CE
= 10 V
60
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 4.0 mA, I
B
= 0.4 mA
0.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 4.0 mA, V
CE
= 10 V
0.95
V
SMALL SIGNAL CHARACTERISTICS
*
Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
f
T
Current Gain - Bandwidth Product
I
C
= 4.0 mA, V
CE
= 10 V,
f = 100 MHz
650
MHz
C
cb
Collector-Base Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
0.7
pF
C
rb
Common-Base Feedback Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
0.6
0.9
pF
rb묬
c
Collector Base Time Constant
I
C
= 4.0 mA, V
CB
= 10 V,
f = 31.8 MHz
9.0
pS
Typical Characteristics
NPN RF Transistor
(continued)
MPSH1
1 / MMBTH1
1
Collector- Emitter Saturation
Voltage vs Collector Current
0.1
1
10
20 30
0.05
0.1
0.15
0.2
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-E
M
ITTE
R
V
O
L
T
A
G
E
(
V
)
CE
S
A
T
C
ββββ
= 10
125 °
C
- 40 °C
25 캜
캜
캜
캜
DC Current Gain
vs Collector Current
0.01
0.1
1
10
100
0
50
100
150
200
250
300
I - COLLECTOR CURRENT (mA)
h
- DC
P
U
L
S
E
D
CU
RR
E
N
T
G
A
IN
FE
C
V = 5V
CE
125 °
C
- 40 °C
25 캜
캜
캜
캜