Техническая Спецификация для Fairchild Semiconductor N/A MMBTH11
Модели
MMBTH11
MPSH11/MMBTH11, Rev. B
Typical Characteristics
(continued)
Capacitance vs
Reverse Bias Voltage
0.1
1
10
50
0
0.6
1.2
1.8
2.4
3
REVERSE BIAS VOLTAGE (V)
CA
P
A
C
IT
A
NC
E
(
p
F
)
f = 1.0 MHz
C
CB
C
ibo
Contours of Constant Gain
Bandwidth Product (f )
0.1
1
10
100
0.1
1
10
50
I - COLLECTOR CURRENT (mA)
V
- C
O
LL
EC
T
O
R
V
O
L
T
A
G
E
(
V
)
CE
C
T = 25 C
A
T
º
100 MHz
200 MHz
300 MHz
400 MHz
500 MHz
600 MHz
700 MHz
800 MHz
900 MHz
1000 MHz
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P
-
PO
W
E
R
D
ISSI
P
A
TI
O
N
(
m
W
)
D
SOT-23
TO-92
°
Collector Cut-Off Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
T - AMBIENT TE MPE RATURE ( C)
I
-
C
O
L
L
E
C
T
O
R
C
U
RRE
NT
(
n
A)
A
V = 30V
CB
°
CBO
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
20 30
0.2
0.4
0.6
0.8
1
I - COLLE CTOR CURRENT ( mA)
V
-
B
A
S
E
-E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
BE
S
A
T
125 °
C
- 40 °C
25 캜
캜
캜
캜
C
ββββ
= 10
Base-Emitt er ON Voltage vs
Collector Current
0.01
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-E
M
IT
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
BE
(O
N)
C
V = 5.0V
CE
125 °
C
- 40 °C
25 캜
캜
캜
캜
MPSH1
1 / MMBTH1
1
NPN RF Transistor
(continued)