Техническая Спецификация для Fairchild Semiconductor N/A KSA733GTA
Модели
KSA733GTA
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSA733
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base
Voltage
-60
V
V
CEO
Collector-Emitter Voltage
-50
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-150
mA
P
C
Collector Power Dissipation
250
mW
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
-55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= -100
µ
A, I
E
=0 -60
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= -10mA. I
B
=0 -50
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -10
µ
A. I
C
=0 -
5
V
I
CBO
Collector Cut-off Current
V
CB
= --60V, I
E
=0 -100
nA
I
EBO
Emitter Cut-off Current
V
EB
= -5V, I
C
=0 -100
nA
h
FE
DC Current Gain
V
CE
= -6V, I
C
= -1mA
40
700
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -100mA, I
B
= -10mA
-0.18
-0.3
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
= -6V, I
C
= -1mA
-0.50
-0.62
-0.80
V
f
T
Current Gain Bandwidth Product
V
CE
= -6V, I
C
= -10mA
50
180
MHz
C
ob
Output Capacitance
V
CB
= -10V, I
E
= 0, f=1MHz
2.8
pF
NF
Noise Figure
V
CE
= -6V, I
C
= -0.3mA
f=1MHz, Rs=10k
Ω
6.0
20
dB
Classification
R
O
Y
G
L
h
FE
40 ~ 80
70 ~ 140
120 ~ 240
200 ~ 400
350 ~ 700
KSA733
Low Frequency Amplifier
• Collector-Base Voltage : V
CBO
= -60V
• Complement to KSC945
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1. Emitter 2. Base 3. Collector
TO-92
1