Техническая Спецификация для Fairchild Semiconductor N/A FMMT549
Модели
FMMT549
FMMT549 — PNP Lo
w Sa
turation T
ransistor
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FMMT549 Rev. C1
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
* DC Item are tested by Pulse Test: Pulse Width
≤300μs, Duty Cycle≤2%
Symbol
Parameter
Conditions
Min.
Max.
Units
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= -10mA, I
B
= 0
-30
V
BV
CBO
Collector-Base Breakdown Voltage
I
C
= -100
μA, I
E
= 0
-35
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -100
μA, I
C
= 0
-5.0
V
I
CBO
Collector Cutoff Current
V
CB
= -30V, I
E
= 0
V
CB
= -30V, I
E
= 0, T
A
= 100
°C
-100
-10
nA
μA
μA
I
EBO
Emitter Cutoff Current
V
EB
= -4.0V, I
C
=0
-100
nA
On Characteristics*
h
FE
DC Current Gain
V
CE
= -2.0V, I
C
= -50mA
V
CE
= -2.0V, I
C
= -500mA
V
CE
= -2.0V, I
C
= -1A
V
CE
= -2.0V, I
C
= -2A
70
100
80
40
40
300
V
CE
(sat) Collector-Emitter Saturation Voltage
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
-500
-750
-750
mV
mV
mV
V
BE
(sat) Base-Emitter Saturation Voltage
I
C
= -1A, I
B
= -100mA
-1.25
V
V
BE
(on) Base-Emitter On Voltage
I
C
= -1A, V
CE
= -2.0V
-1.0
V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product
I
C
= -100mA, V
CE
= -5V,
f = 100MHz
100
MHz
C
ob
Output Capacitance
V
CB
= -10V, I
E
= 0, f = 1MHz
25
pF