Техническая Спецификация для Fairchild Semiconductor N/A FMMT549
Модели
FMMT549
FMMT549 — PNP Lo
w Sa
turation T
ransistor
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FMMT549 Rev. C1
3
Typical Performance Characteristics
0
1
2
3
4
5
0
100
200
300
400
500
600
700
800
4mA
3.5mA
3mA
2.5mA
1mA
Ib=0.5mA
2mA
1.5mA
Col
le
c
to
r Cur
re
nt
,
Ic
[
m
A]
Collector-Emitter Voltage, Vce[V]
Collector- Emitter Voltage vs
Collector current
Current Gain vs Collector Current
0.0001
0.001
0.01
0.1
1
10
0
100
200
300
400
500
600
I - COLLECTOR CURRENT (A)
H
-
C
U
RRE
NT
G
A
IN
C
FE
25°C
125°C
- 40°C
V = 2.0V
ce
Base-Emitter On Voltage vs
Collector Current
0.0001
0.001
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I - COLLECTOR CURRENT (A)
V
-
BA
SE
-E
M
IT
T
ER
O
N
V
O
LTAG
E (
V
)
C
BE
O
N
25 °C
- 40 °C
125 °C
V = 2.0V
ce
Base-Emitter Saturation
Voltage vs Collector Current
0.001
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I - COLLECTOR CURRENT (A)
V
-BAS
E-
E
M
IT
TE
R
S
A
T
U
R
A
T
IO
N
V
O
L
T
AG
E(
V)
C
BE
S
A
T
25 °C
- 40 °C
125 °C
β = 10
Collector-Emitter Saturation
Voltage vs Collector Current
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (A)
V
-
C
O
L
L
E
C
T
O
R
-E
M
IT
T
E
R
V
O
L
T
A
GE
(
V
)
C
CE
S
A
T
- 40°C
25°C
125°C
β = 10
Input/Output Capacitance vs
Reverse Bias Voltage
0.1
0.5
1
10
20
50
100
0
20
40
60
80
100
120
V - COLLECTOR VOLTAGE (V)
CA
P
A
C
IT
A
N
C
E
(
p
f)
CE
V = 2.0V
ce
C
ibo
C
obo
f = 1.0MHz