Техническая Спецификация для Fairchild Semiconductor N/A MJD2955TF
Модели
MJD2955TF
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD295
5
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW
≤
300ms, Duty Cycle
≤
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
- 70
V
V
CEO
Collector-Emitter Voltage
- 60
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current
- 10
A
I
B
Base Current
- 6
A
P
C
Collector Dissipation (T
C
=25
°
C)
20
W
Collector Dissipation (T
a
=25
°
C)
1.75
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
I
C
= - 30mA, I
B
= 0
-60
V
I
CEO
Collector Cut-off Current
V
CE
= - 30V, I
E
= 0
- 50
µ
A
I
CBO
Collector Cut-off Current
V
CB
= - 70V, I
E
= 0
- 2
mA
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 0.5
mA
h
FE
* DC Current Gain
V
CE
= - 4V, I
C
= - 4A
V
CE
= - 4V, I
C
= -10A
20
5
100
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= - 4A, I
B
= - 0.4A
I
C
= - 10A, I
B
= - 3.3A
- 1.1
- 8
V
V
V
V
BE
(on)
* Base-Emitter ON Voltage
V
CE
= - 4V, I
C
= - 4A
-1.8
V
f
T
Current Gain Bandwidth Product
V
CE
= - 10V, I
C
= - 500mA
2
MHz
MJD2955
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
Low Speed Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ -I “ Suffix)
• Electrically Similar to Popular MJE2955T
• DC Current Gain Specified to 10A
• High Current Gain - Bandwidth Product:
• Straight Lead (I-PAK, “ -I “ Suffix)
• Electrically Similar to Popular MJE2955T
• DC Current Gain Specified to 10A
• High Current Gain - Bandwidth Product:
f
T
= 2MHz (MIN), I
C
= -500mA
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1