Техническая Спецификация для Fairchild Semiconductor N/A NZT7053
Модели
NZT7053
2N7052 / 2N7053 / NZT7053
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
100
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
µ
A, I
E
= 0
100
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1.0 mA, I
C
= 0
12
V
I
CBO
Collector-Cutoff Current
V
CB
= 80 V, I
E
= 0
0.1
µ
A
I
CES
Collector-Cutoff Current
V
CE
= 80 V, I
E
= 0
0.2
µ
A
I
EBO
Emitter-Cutoff Current
V
EB
= 7.0 V, I
C
= 0
0.1
µ
A
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 1.0 A, V
CE
= 5.0 V
10,000
1,000
20,000
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 100 mA, I
B
= 0.1 mA
1.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 100 mA, V
BE
= 5.0 V
2.0
V
SMALL SIGNAL CHARACTERISTICS
*
Pulse Test: Pulse Width
£
300
m
s, Duty Cycle
£
1.0%
F
T
Transition Frequency
I
C
= 100 mA, V
CE
= 5.0 V,
200
MHz
C
cb
Collector-Base Capacitance
V
CB
= 10 V,f = 1.0 MHz 2N7052
2N7053
10
8.0
pF
NPN Darlington Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
1
0
20
40
60
80
100
I - COLLECTOR CURRENT (A)
h
-
TY
PI
CA
L
P
U
LS
E
D
CU
RR
E
N
T
G
A
IN
(
K
)
C
FE
125 °C
25 °C
- 40°C
Collector-Emitter Saturation
Voltage vs Collector Current
Voltage vs Collector Current
P 06
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V
-
COLL
ECT
O
R
EMI
TTER
VOL
T
A
GE (
V
)
C
C
ESA
T
β
= 1000
125 °C
25 °C
- 40°C