Техническая Спецификация для Fairchild Semiconductor N/A NZT7053
Модели
NZT7053
2N7052 / 2N7053 / NZT7053
NPN Darlington Transistor
(continued)
Typical Characteristics
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V - BA
SE EMITTER VOL
T
A
GE (V)
C
BE
SA
T
β
= 1000
125 °C
25 °C
- 40°C
Base Emitter ON Voltage vs
Collector Current
P 06
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V
- BA
SE
EMITTE
R ON
VOL
T
A
GE
(V)
C
BE
ON
V = 5V
CE
125 °C
25 °C
- 40°C
Collector-Cutoff Current
vs. Ambient Temperature
P 06
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I - C
OLLEC
T
O
R
CUR
RENT
(nA
)
A
CB
O
º
V = 80V
CB
Junction Capacitance vs
Reverse Bias Voltage
0.1
1
10
100
1
10
100
REVERSE BIAS VOLTAGE (V)
J
U
N
C
T
IO
N
CA
P
A
CI
T
A
NC
E (
p
F
)
C cb
C
ib
Typical Collector-Emitter Leakage
Current vs Temperature
0
40
80
120
160
0.1
1
10
100
1000
T - JUNCTION TEMPERATURE ( C)
I
-
L
E
AK
AG
E
C
U
R
R
E
N
T
(
n
A)
J
CE
S
º
V = 80V
CE
V = 0
BE
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0 .5
0.75
1
TEMPERATURE ( C)
P
- P
O
W
E
R
D
IS
S
IP
A
T
IO
N
(
W
)
D
o
TO-92
SOT-223
TO-226