Cypress CY62137FV30 用户手册
Cypress Semiconductor Corporation
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Document Number: 001-07141 Rev. *F
Revised January 2, 2008
CY62137FV30 MoBL
®
2-Mbit (128K x 16) Static RAM
Features
■
Very high speed: 45 ns
■
Temperature ranges
❐
Industrial: –40°C to +85°C
❐
Automotive-A: –40°C to +85°C
❐
Automotive-E: –40°C to +125°C
■
Wide voltage range: 2.20V–3.60V
■
Pin compatible with CY62137CV/CV25/CV30/CV33,
CY62137V, and CY62137EV30
CY62137V, and CY62137EV30
■
Ultra low standby power
❐
Typical standby current: 1
μA
❐
Maximum standby current: 5
μA (Industrial)
■
Ultra low active power
❐
Typical active current: 1.6 mA at f = 1 MHz (45 ns speed)
■
Easy memory expansion with CE and OE features
■
Automatic power down when deselected
■
CMOS for optimum speed and power
■
Byte power down feature
■
Available in Pb free 48-Ball VFBGA and 44-pin TSOP II
package
package
Functional Description
The CY62137FV30 is a high performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
®
) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption by 90% when addresses are not toggling. Placing
the device into standby mode reduces power consumption by
more than 99% when deselected (CE HIGH or both BLE and
BHE are HIGH). The input and output pins (IO
automatic power down feature that significantly reduces power
consumption by 90% when addresses are not toggling. Placing
the device into standby mode reduces power consumption by
more than 99% when deselected (CE HIGH or both BLE and
BHE are HIGH). The input and output pins (IO
0
through IO
15
) are
placed in a high impedance state in the following conditions:
■
Deselected (CE HIGH)
■
Outputs are disabled (OE HIGH
■
Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH)
(BHE, BLE HIGH)
■
Write operation is active (CE LOW and WE LOW)
Write to the device by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from IO pins (IO
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from IO pins (IO
0
through IO
7
) is written into the location
specified on the address pins (A
0
through A
16
). If Byte High
Enable (BHE) is LOW, then data from IO pins (IO
8
through IO
15
)
is written into the location specified on the address pins (A
0
through A
16
).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW, while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on IO
Enable (OE) LOW, while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on IO
0
to IO
7
. If
Byte High Enable (BHE) is LOW, then data from memory
appears on IO
appears on IO
8
to IO
15
. See the
on page 9 for a
complete description of read and write modes.
For best practice recommendations, refer to the Cypress
application note
application note
128K x 16
RAM Array
IO
0
–IO
7
ROW D
E
COD
E
R
A
8
A
7
A
6
A
5
A
2
COLUMN DECODER
A
11
A
12
A
13
A
14
A
15
S
E
NS
E AMPS
DATA IN DRIVERS
OE
A
4
A
3
IO
8
–IO
15
CE
WE
BHE
A
16
A
0
A
1
A
9
A
10
BLE
BHE
BLE
BLE
CE
POWER DOWN
CIRCUIT
Logic Block Diagram