Cypress CY62137FV30 用户手册
CY62137FV30 MoBL
®
Document Number: 001-07141 Rev. *F
Page 3 of 12
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied .......................................... –55°C to + 125°C
Power Applied .......................................... –55°C to + 125°C
Supply Voltage to Ground
Potential ...........................................................-0.3V to 3.9V
Potential ...........................................................-0.3V to 3.9V
DC Voltage Applied to Outputs
in High Z state
in High Z state
............................................-0.3V to 3.9V
DC Input Voltage
.......................................–0.3V to 3.9V
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage ......................................... > 2001V
(MIL–STD–883, Method 3015)
(MIL–STD–883, Method 3015)
Latch up Current .................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
V
CC
CY62137FV30LL Ind’l/Auto-A
–40°C to +85°C 2.2V to 3.6V
Auto-E
–40°C to +125°C
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
45 ns (Ind’l/Auto-A)
55 ns (Auto-E)
Unit
Min Typ
Max
Min Typ
Max
V
OH
Output HIGH Voltage
2.2 < V
CC
< 2.7
I
OH
= –0.1 mA
2.0
2.0
V
2.7 < V
CC
< 3.6
I
OH
= –1.0 mA
2.4
2.4
V
V
OL
Output LOW Voltage
2.2 < V
CC
< 2.7
I
OL
= 0.1 mA
0.4
0.4
V
2.7 < V
CC
< 3.6
I
OL
= 2.1mA
0.4
0.4
V
V
IH
Input HIGH Voltage
2.2 < V
CC
< 2.7
1.8
V
CC
+ 0.3 1.8
V
CC
+ 0.3
V
2.7 < V
CC
< 3.6
2.2
V
CC
+ 0.3 2.2
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
2.2 < V
CC
< 2.7
–0.3
0.6
–0.3
0.6
V
2.7 < V
CC
< 3.6
–0.3
0.8
–0.3
0.8
V
I
IX
Input Leakage Current
GND < V
I
< V
CC
–1
+1
–4
+4
μA
I
OZ
Output Leakage
Current
Current
GND < V
O
< V
CC
, Output disabled
–1
+1
–4
+4
μA
I
CC
V
CC
Operating Supply
Current
f = f
max
= 1/t
RC
V
CC
= V
CC(max)
I
OUT
= 0 mA
CMOS levels
13
18
15
25
mA
f = 1 MHz
1.6
2.5
2
3
I
SB1
Automatic CE Power
Down Current – CMOS
Inputs
Down Current – CMOS
Inputs
CE > V
CC
–
0.2V,
V
IN
> V
CC
– 0.2V, V
IN
< 0.2V
f = f
max
(address and data only),
f = 0 (OE, WE, BHE, and BLE), V
CC
= 3.60V
1
5
1
20
μA
I
SB2
[7]
Automatic CE Power
Down Current – CMOS
Inputs
Down Current – CMOS
Inputs
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
1
5
1
20
μA
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
Max
Unit
C
IN
Input Capacitance
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
10
pF
C
OUT
Output Capacitance
10
pF
Notes
4. V
IL(min)
= –2.0V for pulse durations less than 20 ns.
5. V
IH(max)
=V
CC
+0.75V for pulse durations less than 20 ns.
6. Full device AC operation assumes a minimum of 100
μs ramp time from 0 to V
CC
(min) and 200
μs wait time after V
CC
stabilization.
7. Only chip enable (CE) and byte enables (BHE and BLE) are tied to CMOS levels to meet the I
SB2
/ I
CCDR
specification. Other inputs can be left floating.