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33-4

MOTOROLA

 

 

(2)

Solving equations 1 and 2 for K gives:

K = P

D 

 

× (T

A 

+ 273 × C) + Q

JMA 

 × P

D

 2

 

(3)

where K is a constant pertaining to the particular part. K can be determined from equation
(3) by measuring P

D

 (at equilibrium) for a known T

A

. Using this value of K, the values

of P

D

 and T

J

 can be obtained by solving equations (1) and (2) iteratively for any value of

T

A

.

(V

SS 

= V

SSPLL

= V

SSF 

= V

SSA

= 0 V

DC

)

Input High Voltage

V

IH

0.7 x V

DD

5.25

V

Input Low Voltage

V

IL

V

SS

 

– 0.3 0.35 x V

DD

V

Input Hysteresis

V

HYS

0.06 x 

V

DD

—

mV

Input Leakage Current

V

in

 = V

DD

 or V

SS

, Input-only pins

I

in

-1.0

1.0

µA

High Impedance (Off-State) Leakage Current

V

in

 

= V

DD

 or V

SS

, All input/output and output pins 

I

OZ

-1.0

1.0

µA

Output High Voltage (All input/output and all output pins)
I

OH

 

= –2.0 mA

V

OH

V

DD 

- 0.5

__

V

Output Low Voltage (All input/output and all output pins)
I

OL

 

= 2.0mA

V

OL

__

0.5

V

Weak Internal Pull Up Device Current, tested at V

IL

 Max.

I

APU

-10

-130

µA

Input Capacitance 

2

All input-only pins
All input/output (three-state) pins

C

in

—
—

7
7

pF

Load Capacitance

3

(50% Partial Drive)
(100% Full Drive)

C

L

25
50

pF

Supply Voltage (includes core modules and pads)

V

DD

2.7

3.6

V

RAM Memory Standby Supply Voltage
   Normal Operation: V

DD 

> V

STBY 

- 0.3 V

   Standby Mode: V

DD 

<

 

V

STBY 

- 0.3 V

 

V

STBY

0.0
1.8

3.6
3.6

V

 Flash Memory Supply Voltage

V

DDF

2.7

3.6

V

P

D

K

T

J

273

°C

+

(

)

÷

=