Intel Pentium M 730 RH80536GE0252M 用户手册

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RH80536GE0252M
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Thermal Specifications and Design Considerations
90
  
 
Mobile Intel
 Pentium
 4 Processor-M Datasheet
and is not representative of the absolute maximum power the processor may dissipate under worst case 
conditions.
2. Not 100% tested. These power specifications are determined by characterization of the processor currents at 
higher temperatures and extrapolating the values for the temperature indicated.
3. The maximum junction temperature (T
J
) is specified as the hottest location on the die. The thermal monitor’s 
automatic mode is used to indicate that the maximum T
J
 has been reached. Refer to 
 for T
J
 
measurement guidelines (Refer to 
 for thermal monitor details).
6.1
Thermal Specifications
6.1.1
Thermal Diode
The Mobile Intel Pentium 4 Processor-M incorporates two methods of monitoring die temperature, 
the thermal monitor and the thermal diode. The thermal monitor (detailed in 
) must be 
used to determine when the minimum or maximum specified processor junction temperature has 
been reached. The second method, the thermal diode, can be read by an off-die analog/digital 
converter (a thermal sensor) located on the motherboard, or a stand-alone measurement kit. The 
thermal diode may be used to monitor the die temperature of the processor for thermal 
management or instrumentation purposes but cannot be used to indicate that the maximum T
J
 of 
the processor has been reached. 
 and 
 provide the diode interface and 
specifications.
Note:
The reading of the thermal sensor connected to the thermal diode does not reflect the temperature 
of the hottest location on the die (T
J
). This is due to inaccuracies in the thermal diode, on-die 
temperature gradients between the location of the thermal diode and the hottest location on the die, 
and time based variations in the die temperature. Time based variations can occur since the 
sampling rate of the sensor is much slower than the die level temperature changes.
The offset between the thermal diode based temperature reading and the hottest location of the die 
(thermal monitor) may be characterized using the thermal monitor’s Automatic mode activation of 
thermal control circuit. This temperature offset must be taken into account when using the 
processor thermal diode to implement power management events.
Table 39.  Thermal Diode Interface
Table 40.  Thermal Diode Specifications
NOTES:
1. Intel does not support or recommend operation of the thermal diode under reverse bias.
2. Characterized at 100°C.
3. Not 100% tested. Specified by design characterization.
4. The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by the diode 
equation:                                                                                                                                                                      
I
FW
=I
s
 *(e
(qV
D
/nkT)
 -1)                                                                                                                                                                         
Signal Name
Pin/Ball Number
Signal Description
THERMDA
B3
Thermal diode anode
THERMDC
C4
Thermal diode cathode
Symbol
Parameter
Min
Typ
Max
Unit
Notes
I
FW
Forward Bias Current
5
300
µ
A
1
n
Diode Ideality Factor
1.0012
1.0021
1.0030
2, 3, 4
R
T
Series Resistance
3.86
ohms
2, 3, 5