Kingston Technology 8GB 667MHz DDR2 ECC Fully Buffered CL5 DIMM Dual Rank, x4 KVR667D2D4F5/8G 数据表

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KVR667D2D4F5/8G
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页码 7
continued
ValueRAM
Kingston.com
Document No. VALUERAM0607-001.A00    01/23/08    Page 5
Continued >>
Architecture:
Advanced Memory Buffer Pin Description:
Pin Name
Pin Description
Count
FB-DIMM Channel Signals
99
1
e
n
il
 
e
v
it
i
s
o
p
 ,
t
u
p
n
k
c
o
l
C
 
m
e
t
s
y
S
K
C
S
SCK
1
e
n
il
 
e
v
it
a
g
e
n
 ,
t
u
p
n
k
c
o
l
C
 
m
e
t
s
y
S
4
1
s
e
n
il
 
e
v
it
i
s
o
p
 ,
a
t
a
D
 
d
n
u
o
b
h
tr
o
N
 
y
r
a
m
ir
P
]
0
:
3
1
[
N
P
PN
4
1
s
e
n
il
 
e
v
it
a
g
e
n
 ,
a
t
a
D
 
d
n
u
o
b
h
tr
o
N
 
y
r
a
m
ir
P
]
0
:
3
1
[
0
1
s
e
n
il
 
e
v
it
i
s
o
p
 ,
a
t
a
D
 
d
n
u
o
b
h
t
u
o
S
 
y
r
a
m
ir
P
]
0
:
9
[
S
P
PS
0
1
s
e
n
il
 
e
v
it
a
g
e
n
 ,
a
t
a
D
 
d
n
u
o
b
h
t
u
o
S
 
y
r
a
m
ir
P
]
0
:
9
[
4
1
s
e
n
il
 
e
v
it
i
s
o
p
 ,
a
t
a
D
 
d
n
u
o
b
h
tr
o
N
 
y
r
a
d
n
o
c
e
S
]
0
:
3
1
[
N
S
SN
4
1
s
e
n
il
 
e
v
it
a
g
e
n
 ,
a
t
a
D
 
d
n
u
o
b
h
tr
o
N
 
y
r
a
d
n
o
c
e
S
]
0
:
3
1
[
0
1
s
e
n
il
 
e
v
it
i
s
o
p
 ,
a
t
a
D
 
d
n
u
o
b
h
t
u
o
S
 
y
r
a
d
n
o
c
e
S
]
0
:
9
[
S
S
SS
0
1
s
e
n
il
 
e
v
it
a
g
e
n
 ,
a
t
a
D
 
d
n
u
o
b
h
t
u
o
S
 
y
r
a
d
n
o
c
e
S
]
0
:
9
[
FBDRES
To an external precision cali
1
c
c
V
 
o
d
e
t
c
e
n
n
o
c
 r
o
t
s
i
s
e
n
o
it
a
r
b
DDR2 Interface Signals
175
DQS[8:0]
Data Strobes, positive lines
9
DQS[8:0]
Data Strobes, negative lines
9
DQS[17:9]/DM[8:0] Data Strobes (x4 DRAM only), positive lines. These signals are driven low to x8 DRAM on writes.
9
DQS
9
s
e
n
il
 
e
v
it
a
g
e
n
 ,
)
y
l
n
o
 
M
A
R
D
 
4
x
s
e
b
o
rt
S
 
a
t
a
D
]
9
:
7
1
[
DQ[63:0]
Data
64
CB[7:0]
Checkbits
8
2
3
d
n
a
m
m
o
c
 
e
g
r
a
h
c
-
e
r
p
 
e
h
f
o
 t
r
a
p
 
s
0
1
A
 .
s
e
s
s
e
r
d
d
A
B
]
0
:
5
1
[
A
 ,
A
]
0
:
5
1
[
A
BA[2:0]A, BA[2:0]B Bank Addresses
6
RASA, RASB
Part of command, with CAS, WE, and CS
2
.]
0
:
1
[
CASA, CASB
Part of command, with RAS, WE, and CS
2
.]
0
:
1
[
WEA, WEB
Part of command, with RAS, CAS, and CS
2
.]
0
:
1
[
ODTA, ODTB
On-die Termination Enable
2
CKE[1:0]A, CKE[1:0]B Clock Enable (one per rank)
4
CS[1:0]A, CS[1:0]B Chip Select (one per rank)
4
CLK[3:0]
CLK[1:0] used on 9 and 18 device DIMMs, CLK[3:0] used on 36 device DIMMs. CLK[3:2] should be out-
put disabled when not in use.
4
CLK[3:0]
Negative lines for CLK[3:0]
4
1
.
8
1
C
_
C
R
D
D
 
d
n
a
 
8
1
B
_
C
R
D
D
 r
o
n
i
p
 
n
r
u
t
e
n
o
m
m
o
C
 :
n
o
it
a
s
n
e
p
m
o
C
 
R
D
D
4
1
C
_
C
R
D
D
1
4
1
C
_
C
R
D
D
 
n
i
p
 
n
r
u
t
e
n
o
m
m
o
c
 
o
d
e
t
c
e
n
n
o
c
 r
o
t
s
i
s
e
R
 :
n
o
it
a
s
n
e
p
m
o
C
 
R
D
D
8
1
B
_
C
R
D
D
1
4
1
C
_
C
R
D
D
 
n
i
p
 
n
r
u
t
e
n
o
m
m
o
c
 
o
d
e
t
c
e
n
n
o
c
 r
o
t
s
i
s
e
R
 :
n
o
it
a
s
n
e
p
m
o
C
 
R
D
D
8
1
C
_
C
R
D
D
DDRC_B12
DDR Compensation: Resistor connected to V
SS
1
DDRC_C12
DDR Compensation: Resistor connected to V
DD
1