Freescale Semiconductor DEMO9S08DZ60 Demo Board DEMO9S08DZ60 DEMO9S08DZ60 数据表

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This section provides details about program/erase times and program-erase endurance for the Flash and
EEPROM memory.

Program and erase operations do not require any special power sources other than the normal V

DD

supply.

For more detailed information about program/erase operations, see

1

—

Supply voltage for program/erase

V

prog/erase

2.7

5.5

V

2

—

Supply voltage for read operation

0 < f

Bus

 < 8 MHz

0 < f

Bus

< 20 MHz

V

Read

2.7

5.5

V

3

—

Internal FCLK frequency

1

1

The frequency of this clock is controlled by a software setting.

f

FCLK

150

200

kHz

4

—

Internal FCLK period (1/FCLK)

t

Fcyc

5

6.67

μ

s

5

—

Byte program time (random location)

(2)

t

prog

9

t

Fcyc

6

—

Byte program time (burst mode)

(2)

t

Burst

4

t

Fcyc

7

—

Page erase time

2

2

These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.

t

Page

4000

t

Fcyc

8

—

Mass erase time

(2)

t

Mass

20,000

t

Fcyc

9

C

Flash Program/erase endurance

3

T

L

 to T

H

 = –40

°

C to + 125

°

C

T = 25

°

C

3

Typical endurance for Flash and EEPROM is based on the intrinsic bit cell performance. For additional information on how
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for
Nonvolatile Memory.

n

FLPE

10,000

—

—

100,000

—
—

cycles

10

C

EEPROM Program/erase endurance

3

T

L

 to T

H

 = –40

°

C to + 0

°

C

T

L

 to T

H

 = 0

°

C to + 125

°

C

T = 25

°

C

n

EEPE

10,000
50,000

—

—
—

100,000

—
—
—

cycles

11

C

Data retention

4

4

Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25

°

C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data

retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.

t

D_ret

15

100

—

years