Fairchild Semiconductor N/A BC847BS 数据表
产品代码
BC847BS
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BC847BS Rev. A
BC8
47BS
June 2007
BC847BS
NPN Multi-chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 200 mA.
Sourced from Process 07.
Absolute Maximum Ratings
* T
a
= 25
°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
* T
a
= 25
°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
50
V
V
CES
Collector-Base Voltage
50
V
V
CEO
Collector-Emitter Voltage
45
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current (DC)
100
mA
T
J,
T
STG
Junction Temperature and Storage Temperature
-55 ~ +150
°C
Symbol
Characteristic
Max
Units
P
D
Total Device Dissipation
Derate above 25℃
Derate above 25℃
210
1.6
mW
mW/℃
R
θ JA
Thermal Resistance, Junction to Ambient
625
℃/W
C1
B2
E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
Pin #1
B1
C2
E2
SC70-6
Mark: .1F
Dual NPN Signal Transister